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  3. Sensing Properties of Palladium-gate Mos (pd-mos) Hydrogen Sensor-based on Plasma Grown Silicon Dioxide

Sensing Properties of Palladium-gate Mos (pd-mos) Hydrogen Sensor-based on Plasma Grown Silicon Dioxide

Type of Publication
Journal Article
Year of Publication
2000
Authors

D. Dwivedi; R. Dwivedi; S.K. Srivastava

Abstract

No abstract available

DOI

http://dx.doi.org/10.1016/S0925-4005(99)00069-6

Volume

71

Pagination

161-168

ISSN Number

4005

Url
http://dx.doi.org/10.1016/S0925-4005(99)00069-6
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