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V. Palmisano; E. Weidner; L. Boon-Brett; C. Bonato; F. Harskamp; P. Moretto; M.B. Post; R. Burgess; C. Rivkin; W.J. Buttner


The resistance of several models of catalytic, workfunction-based metal-oxide-semiconductor and electrochemical hydrogen sensors to chemical contaminants such as SO2, H2S, NO2 and hexamethyldisiloxane (HMDS) has been investigated. These sensor platforms are among the most commonly used for the detection of hydrogen. The evaluation protocols were based on the methods recommended in the ISO 26142:2010 standard. Permanent alteration of the sensor response to the target analyte (H-2) following exposure to potential poisons at the concentrations specified in ISO 26142 was rarely observed. Although a shift in the baseline response was often observed during exposure to the potential poisons, only in a few cases did this shift persist after removal of the contaminants. Overall, the resistance of the sensors to poisoning was good. However, a change in sensitivity to hydrogen was observed in the electrochemical platform after exposure to NO2 and for a catalytic sensor during exposure to SO2. The siloxane resistance test prescribed in ISO 26142, based on exposure to 10 ppm HMDS, may possibly not properly reflect sensor robustness to siloxanes. Further evaluation of the resistance of sensors to other Si-based contaminants and other exposure profiles (e.g., concentration, exposure times) is needed. Copyright (C) 2015, The Authors. Published by Elsevier Ltd on behalf of Hydrogen Energy Publications, LLC. This is an open access article under the CC BY-NC-SA license







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