A Pt–Ti–O gate Si-metal-insulator-semiconductor field-effect transistor hydrogen gas sensor

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Author
Toshiyuki Usagawa
Yota Kikuchi
Abstract

A hydrogen gas sensor based on platinum–titanium–oxygen (Pt–Ti–O) gate silicon-metal-insulator-semiconductor field-effect transistors (Si-MISFETs) was developed. The sensor has a unique gate structure composed of titanium and oxygen accumulated around platinum grains on top of a novel mixed layer of nanocrystalline TiOx
and superheavily oxygen-doped amorphous titanium formed on SiO2/Si
substrates. The FET hydrogen sensor shows high reliability and high sensing amplitude (

Year of Publication
2010
Journal
Journal of Applied Physics
Volume
108
ISBN Number
0021-8979
1089-7550
DOI
10.1063/1.3483942

This material was prepared as an account of work sponsored by an agency of the United States Government.
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